INFLUENCE OF MECHANICAL STRESS IN A MULTILAYER STRUCTURE ON SPATIAL DISTRIBUTION OF DOPANTS IN IMPLANTED-JUNCTION AND DIFFUSION-JUNCTION RECTIFIERS

DOI10.1142/S0217984910022925zbMath1191.82116MaRDI QIDQ3566465

E. L. Pankratov

Publication date: 8 June 2010

Published in: Modern Physics Letters B (Search for Journal in Brave)

zbMATH Keywords

\(p\)-\(n\) junctions in heterostructuredecreasing of depth of \(p\)-\(n\) junctionsinfluence of mechanical stress on depth of \(p\)-\(n\) junctions

Mathematics Subject Classification ID

Statistical mechanics of semiconductors (82D37)

Cites Work

• Numerical simulations of island formation in a coherent strained epitaxial thin film system

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