Numerical Method for 2D Simulation of a Silicon MESFET with a Hydrodynamical Model Based on the Maximum Entropy Principle

DOI10.1137/070706537zbMath1190.82047OpenAlexW2001593965MaRDI QIDQ3567016

Publication date: 10 June 2010

Published in: SIAM Journal on Scientific Computing (Search for Journal in Brave)

Full work available at URL: https://doi.org/10.1137/070706537

zbMATH Keywords

method of lines Poisson equation stabilization method Boltzmann transport equation drift-diffusion equations energy-transport models the hydrodynamical models cubic interpolation \(\mathbb{C}^2\)-spline difference-differential model

Mathematics Subject Classification ID

Numerical computation using splines (65D07) Rarefied gas flows, Boltzmann equation in fluid mechanics (76P05) Statistical mechanics of semiconductors (82D37) Method of lines for initial value and initial-boundary value problems involving PDEs (65M20)

Related Items (10)

Application of Rational Interpolations for Solving Boundary Value Problems with Singularities ⋮ Asymptotic stability of the stationary solution for a new mathematical model of charge transport in semiconductors ⋮ Numerical analysis of the kinetic equation describing isotropic 4-wave interactions in non-linear physical systems ⋮ Local-in-time well-posedness of a regularized mathematical model for silicon MESFET ⋮ On an algorithm for finding the electric potential distribution in the DG-MOSFET transistor ⋮ A new approach to numerical simulation of charge transport in double gate-MOSFET ⋮ Development and Analysis of the Fast Pseudo Spectral Method for Solving Nonlinear Dirichlet Problems ⋮ Numerical analysis of a self-similar turbulent flow in Bose-Einstein condensates ⋮ On calculating the electric potential for 2D silicon transistor with a silicon oxide nanochannel ⋮ Regularity of the solution and well-posedness of a mixed problem for an elliptic system with quadratic nonlinearity in gradients

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