Localization and quantification of noise sources in four‐gate field‐effect‐transistors

DOI10.1002/JNM.744zbMath1196.82130OpenAlexW4229897054MaRDI QIDQ3585576

S. Rodríguez-Bolívar, J. A. López Villanueva, A. Luque Rodríguez, Andrés Godoy, F. M. Gómez-Campos, J. A. Jiménez Tejada

Publication date: 20 August 2010

Published in: International Journal of Numerical Modelling: Electronic Networks, Devices and Fields (Search for Journal in Brave)

Full work available at URL: https://doi.org/10.1002/jnm.744

zbMATH Keywords

low frequency noisefour-gate transistorjunction FET (JFET)multiple-gate transistortwo-dimensional (2D) modeling

Mathematics Subject Classification ID

Statistical mechanics of semiconductors (82D37)

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