Development of a 3D Parallel Finite Element Monte Carlo Simulator for Nano-MOSFETs

DOI10.1007/978-3-540-78827-0_11zbMath1229.65006OpenAlexW1494649083MaRDI QIDQ3616810

A. J. García-Loureiro, K. Kalna, Manuel Aldegunde

Publication date: 26 March 2009

Published in: Large-Scale Scientific Computing (Search for Journal in Brave)

Full work available at URL: https://doi.org/10.1007/978-3-540-78827-0_11

Mathematics Subject Classification ID

Monte Carlo methods (65C05) Finite element, Rayleigh-Ritz and Galerkin methods for boundary value problems involving PDEs (65N30) Statistical mechanics of semiconductors (82D37) Parallel numerical computation (65Y05)

Uses Software

• P-SPARSLIB
• METIS

Cites Work

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• Monte Carlo simulation of semiconductor devices
• Study of parallel numerical methods for semiconductor device simulation
• Modified octree mesh generation for Manhattan type structures with narrow layers applied to semiconductor devices

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