COMPUTER SIMULATION OF ZnO FIELD-EFFECT TRANSISTOR FOR HIGH-POWER AND HIGH-TEMPERATURE APPLICATIONS USING THE MONTE CARLO METHOD
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Publication:3635926
DOI10.1142/S0217984909019235zbMath1175.82070OpenAlexW2024853853MaRDI QIDQ3635926
Publication date: 6 July 2009
Published in: Modern Physics Letters B (Search for Journal in Brave)
Full work available at URL: https://doi.org/10.1142/s0217984909019235
Statistical mechanics of semiconductors (82D37) Transport processes in time-dependent statistical mechanics (82C70)
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