DC and small-signal comparison of horizontal emitter designs of InGaP/GaAs heterojunction bipolar transistors

DOI10.1002/JNM.717zbMath1179.78082OpenAlexW1979696303MaRDI QIDQ3647172

Juan M. Lopez-Gonzalez

Publication date: 30 November 2009

Published in: International Journal of Numerical Modelling: Electronic Networks, Devices and Fields (Search for Journal in Brave)

Full work available at URL: https://doi.org/10.1002/jnm.717

zbMATH Keywords

semiconductor materialssemiconductor devicessemiconductor device modelingsemiconductor heterojunctionsgallium compoundsheterojunction bipolar transistors

Mathematics Subject Classification ID

Diffraction, scattering (78A45) Technical applications of optics and electromagnetic theory (78A55) Analytic circuit theory (94C05) Waves and radiation in optics and electromagnetic theory (78A40)

Uses Software

• ATLAS_

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