Numerical Simulation of Charge Transport in Semiconductor Devices Using Mixed Finite Elements

DOI10.1007/978-3-211-99094-0_3zbMath1181.82074OpenAlexW80195272MaRDI QIDQ3654827

Riccardo Sacco

Publication date: 11 January 2010

Published in: Mixed Finite Element Technologies (Search for Journal in Brave)

Full work available at URL: https://doi.org/10.1007/978-3-211-99094-0_3

zbMATH Keywords

drift-diffusion modelGalerkin finite element discretizationfinite volume formulationsemiconductor devicediffusion-advection-reaction equationsGummel map

Mathematics Subject Classification ID

Reaction-diffusion equations (35K57) Statistical mechanics of semiconductors (82D37) Finite element, Rayleigh-Ritz and Galerkin methods for initial value and initial-boundary value problems involving PDEs (65M60) Motion of charged particles (78A35)

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