Numerical Simulation of Thermal Oxidation Process in Semiconductor Devices Using Mixed—Hybrid Finite Elements

DOI10.1007/978-3-211-99094-0_4zbMath1181.82075OpenAlexW2183203174MaRDI QIDQ3654828

Riccardo Sacco

Publication date: 11 January 2010

Published in: Mixed Finite Element Technologies (Search for Journal in Brave)

Full work available at URL: https://doi.org/10.1007/978-3-211-99094-0_4

zbMATH Keywords

elasticityStokes flowreaction-diffusion equationsemiconductor devicemixed-hybrid finite elementsoxidation simulation

Mathematics Subject Classification ID

Reaction-diffusion equations (35K57) Stokes and related (Oseen, etc.) flows (76D07) Statistical mechanics of semiconductors (82D37) Finite element, Rayleigh-Ritz and Galerkin methods for initial value and initial-boundary value problems involving PDEs (65M60)

This page was built for publication: Numerical Simulation of Thermal Oxidation Process in Semiconductor Devices Using Mixed—Hybrid Finite Elements