A QUALITATIVE ANALYSIS OF THE FUNDAMENTAL SEMICONDUCTOR DEVICE EQUATIONS

DOI10.1108/EB009978zbMath0619.65115OpenAlexW2058724619MaRDI QIDQ3756462

Peter Alexander Markowich

Publication date: 1983

Published in: COMPEL - The international journal for computation and mathematics in electrical and electronic engineering (Search for Journal in Brave)

Full work available at URL: https://doi.org/10.1108/eb009978

zbMATH Keywords

matched asymptotic expansionsPoisson's equationboundary layersscalingelliptic systemssingular perturbation theoryfundamental static semiconductor device equationsnormed minimal Debye lengthoxide- semiconductor interfacesSchottky contacts

Mathematics Subject Classification ID

Singular perturbations in context of PDEs (35B25) Partial differential equations of mathematical physics and other areas of application (35Q99) Applications to the sciences (65Z05) Motion of charged particles (78A35)

Related Items (2)

Semiconductor device modelling from the numerical point of view ⋮ A MASS‐LUMPING SEMIDISCRETIZATION OF THE SEMICONDUCTOR DEVICE EQUATIONS

Cites Work

• Singularly disturbed systems of the theory of semiconductor devices
• Theory of the Flow of Electrons and Holes in Germanium and Other Semiconductors

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