ACCURATE COMPUTATION OF ELECTRIC FIELD IN REVERSE‐BIASED SEMICONDUCTOR DEVICES: A MIXED FINITE‐ELEMENT APPROACH

DOI10.1108/eb009991zbMath0619.65120OpenAlexW2006868701MaRDI QIDQ3756468

Antonio Savini, Luisa Donatella Marini

Publication date: 1984

Published in: COMPEL - The international journal for computation and mathematics in electrical and electronic engineering (Search for Journal in Brave)

Full work available at URL: https://doi.org/10.1108/eb009991

zbMATH Keywords

finite element methodfree boundary problemreverse-biased semiconductor devices

Mathematics Subject Classification ID

Finite element, Rayleigh-Ritz and Galerkin methods for boundary value problems involving PDEs (65N30) Partial differential equations of mathematical physics and other areas of application (35Q99) Applications to the sciences (65Z05) Motion of charged particles (78A35)

Related Items

Postprocessing schemes for some mixed finite elements, Mixed finite element methods for elliptic problems

Cites Work

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• Error estimates for the finite element solution of variational inequalities. Part II. Mixed methods
• Error estimates for the finite element solution of variational inequalities. Part I. primal theory
• Sur la régularité de la solution d'inéquations elliptiques