ON ANALYTICAL SOLUTION OF THE NEAR ISOTROPIC APPROXIMATION TO THE BOLTZMANN EQUATION FOR HOT ELECTRONS IN A SEMICONDUCTOR BASE IN AN ELECTRIC FIELD
DOI10.1108/EB010011zbMath0621.76083OpenAlexW2084708660MaRDI QIDQ3758471
Publication date: 1985
Published in: COMPEL - The international journal for computation and mathematics in electrical and electronic engineering (Search for Journal in Brave)
Full work available at URL: https://doi.org/10.1108/eb010011
boundary conditionsBoltzmann equationdistribution functionconfluent hypergeometric functionsconstant electric fieldhot electron transportenergy variablesnear isotropic approximationparabolic band homogeneous semiconductorsemi-infinite semiconductor
Statistical mechanics of crystals (82D25) Rarefied gas flows, Boltzmann equation in fluid mechanics (76P05) Kinetic theory of gases in equilibrium statistical mechanics (82B40)
Cites Work
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