Simulation of the Transient Behavior of a One-Dimensional Semiconductor Device II

DOI10.1137/0726032zbMath0669.65086OpenAlexW2051976287MaRDI QIDQ3823108

Maria Cristina J. Squeff, Irene Martínez Gamba

Publication date: 1989

Published in: SIAM Journal on Numerical Analysis (Search for Journal in Brave)

Full work available at URL: https://semanticscholar.org/paper/85bf0e199e4327952e61bb86339c7518d60fce78

zbMATH Keywords

error estimatesmixed finite-element methodsemiconductor devicesemiconductor simulationmethod of characteristicEinstein relationsconductivity equations

Mathematics Subject Classification ID

Finite element, Rayleigh-Ritz and Galerkin methods for initial value and initial-boundary value problems involving PDEs (65M60) Numerical aspects of the method of characteristics for initial value and initial-boundary value problems involving PDEs (65M25) Technical applications of optics and electromagnetic theory (78A55) Error bounds for initial value and initial-boundary value problems involving PDEs (65M15) Partial differential equations of mathematical physics and other areas of application (35Q99) Applications to the sciences (65Z05) Motion of charged particles (78A35)

Related Items (7)

Numerical algorithms based on Galerkin methods for the modeling of reactive interfaces in photoelectrochemical (PEC) solar cells ⋮ Convergence of a finite element method for the drift-diffusion semiconductor device equations: the zero diffusion case ⋮ Error analysis of the semi-discrete local discontinuous Galerkin method for semiconductor device simulation models ⋮ Adaptive multiresolution semi-Lagrangian discontinuous Galerkin methods for the Vlasov equations ⋮ Finite Element Approximation to Initial-Boundary Value Problems of the Semiconductor Device Equations with Magnetic Influence ⋮ Error Estimates for a Finite Element Method for the Drift-Diffusion Semiconductor Device Equations: The Zero Diffusion Case ⋮ A Parabolic System Model for the Formation of Porous Silicon: Existence, Uniqueness, and Stability

This page was built for publication: Simulation of the Transient Behavior of a One-Dimensional Semiconductor Device II