Theory of Cyclotron Resonance in Strained Silicon Crystals

DOI10.1103/PHYSREV.129.1029zbMath0108.23504OpenAlexW2038331680WikidataQ128524002 ScholiaQ128524002MaRDI QIDQ3844400

Hiroshi H. Hasegawa

Publication date: 1963

Published in: Physical Review (Search for Journal in Brave)

Full work available at URL: https://doi.org/10.1103/physrev.129.1029

zbMATH Keywords

mechanics of particles and systems

Related Items (2)

The inhomogeneous strain distributions within finite cylinders under the axial point load tests and the effects on the valence band of \(Si_{1 - x}Ge_x\) alloy ⋮ Cyclotron Resonance Experiments in Uniaxially Stressed Silicon: Valence Band Inverse Mass Parameters and Deformation Potentials

Cites Work

• Quantum Theory of Cyclotron Resonance in Semiconductors: General Theory
• Application of the Orthogonalized Plane-Wave Method to Silicon Crystal
• Theory of Electron-Phonon Interactions
• Cyclotron Resonance Experiments in Uniaxially Stressed Silicon: Valence Band Inverse Mass Parameters and Deformation Potentials

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