Cyclotron Resonance Experiments in Uniaxially Stressed Silicon: Valence Band Inverse Mass Parameters and Deformation Potentials

DOI10.1103/PHYSREV.129.1041zbMath0108.23505MaRDI QIDQ3844401

J. C. Hensel, G. Feher

Publication date: 1963

Published in: Physical Review (Search for Journal in Brave)

zbMATH Keywords

mechanics of particles and systems

Related Items (3)

The inhomogeneous strain distributions within finite cylinders under the axial point load tests and the effects on the valence band of \(Si_{1 - x}Ge_x\) alloy ⋮ Strain‐Gradient‐Induced Modulation of Carrier Density and Mobility at the LaAlO₃/SrTiO₃ Heterointerface ⋮ Theory of Cyclotron Resonance in Strained Silicon Crystals

Cites Work

• Quantum Theory of Cyclotron Resonance in Semiconductors: General Theory
• Theory of Cyclotron Resonance in Strained Silicon Crystals
• Cyclotron Resonances, Magnetoresistance, and Brillouin Zones in Semiconductors

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