3D NUMERICAL SIMULATION OF TRANSIENT PROCESSES IN SEMICONDUCTOR DEVICES

DOI10.1108/eb010086zbMath0746.65089OpenAlexW2078190393MaRDI QIDQ3990351

B. S. Pol'Skij, A. I. Adamsone

Publication date: 28 June 1992

Published in: COMPEL - The international journal for computation and mathematics in electrical and electronic engineering (Search for Journal in Brave)

Full work available at URL: https://doi.org/10.1108/eb010086

zbMATH Keywords

absolute stabilityPoisson equationcharge transportsemi-implicit schemecontinuity equationsNumerical results3D numerical simulationbipolar transistorsubmicron semiconductor devices

Mathematics Subject Classification ID

PDEs in connection with optics and electromagnetic theory (35Q60) Stability and convergence of numerical methods for boundary value problems involving PDEs (65N12) Technical applications of optics and electromagnetic theory (78A55) Finite difference methods for boundary value problems involving PDEs (65N06) Applications to the sciences (65Z05) Motion of charged particles (78A35)

Related Items (1)

TRANSIENT SEMICONDUCTOR DEVICE SIMULATION INCLUDING ENERGY BALANCE EQUATION

This page was built for publication: 3D NUMERICAL SIMULATION OF TRANSIENT PROCESSES IN SEMICONDUCTOR DEVICES