Finite Element Approximation to Initial-Boundary Value Problems of the Semiconductor Device Equations with Magnetic Influence

DOI10.2307/2152979zbMath0755.65128OpenAlexW4239847050MaRDI QIDQ4012382

Jiang Zhu

Publication date: 27 September 1992

Full work available at URL: https://doi.org/10.2307/2152979

zbMATH Keywords

finite elementmagnetic fieldquasilinearConvergence ratesnonstationary systemsemi-conductor device

Mathematics Subject Classification ID

PDEs in connection with optics and electromagnetic theory (35Q60) Stability and convergence of numerical methods for initial value and initial-boundary value problems involving PDEs (65M12) Finite element, Galerkin and related methods applied to problems in optics and electromagnetic theory (78M10) Finite element, Rayleigh-Ritz and Galerkin methods for initial value and initial-boundary value problems involving PDEs (65M60) Technical applications of optics and electromagnetic theory (78A55) Applications to the sciences (65Z05)

Related Items (4)

A hybrid mixed finite element method for convection-diffusion-reaction equation with local exponential fitting technique ⋮ Finite Element Approximation to Initial-Boundary Value Problems of the Semiconductor Device Equations with Magnetic Influence ⋮ Mathematical Model, Numerical Simulation and Convergence Analysis of a Semiconductor Device Problem with Heat and Magnetic Influences ⋮ Numerical analysis for systems with memory arising from semiconductor simulations

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