Partly dissipative reaction-diffusion systems and a model of phosphorus diffusion in silicon

DOI10.1016/0362-546X(92)90083-QzbMath0773.35029MaRDI QIDQ4032228

Selwyn L. Hollis, Jeffrey J. Morgan

Publication date: 1 April 1993

Published in: Nonlinear Analysis: Theory, Methods & Applications (Search for Journal in Brave)

zbMATH Keywords

global existencepartly dissipative systemsdiffusion in solids

Mathematics Subject Classification ID

Diffusion (76R50) Reaction-diffusion equations (35K57)

Related Items (6)

Invariant regions and existence of global solutions to a generalized m-component reaction-diffusion system with tridiagonal symmetric Toeplitz diffusion matrix ⋮ Asymptotic behaviour of the solution to a singularly perturbed partially dissipative system with a multiple root of the degenerate equation ⋮ Discrete-time methods for equations modelling transport of foreign-atoms in semiconductors ⋮ Singularly perturbed partially dissipative systems of equations ⋮ Asymptotic behaviour of a boundary layer solution to a stationary partly dissipative system with a multiple root of the degenerate equation ⋮ Singularly perturbed partly dissipative reaction-diffusion systems in case of exchange of stabilities.

Cites Work

• Unnamed Item
• Global solutions of reaction-diffusion systems
• Finite time blowup for semilinear reactive-diffusive systems
• Global Existence for Semilinear Parabolic Systems
• Boundedness and Decay Results for Reaction-Diffusion Systems
• Global Existence and Boundedness in Reaction-Diffusion Systems
• Finite-Dimensional Attractors Associated with Partly Dissipative Reaction-Diffusion Systems

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