Identifiability of Semiconductor Defects from LBIC Images
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Publication:4037669
DOI10.1137/0152093zbMath0766.35075OpenAlexW1979257737MaRDI QIDQ4037669
Publication date: 16 May 1993
Published in: SIAM Journal on Applied Mathematics (Search for Journal in Brave)
Full work available at URL: https://doi.org/10.1137/0152093
drift-diffusion equationsgeneration-recombination modelimpurity doping profilelaser-beam-induced current
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Related Items (7)
AN OPTIMAL CONTROL APPROACH TO SEMICONDUCTOR DESIGN ⋮ On the stationary semiconductor equations arising in modeling an LBIC technique ⋮ The Quasi-Neutral Limit in Optimal Semiconductor Design ⋮ Risk-averse optimal control of semilinear elliptic PDEs ⋮ Second-order approach to optimal semiconductor design ⋮ A homogenization model for laser beam-induced current imaging and detection of non-uniform\-ities in semiconductor arrays ⋮ Explicit solutions for LBIC signals in semiconductors by asymptotic method
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