Electrode separation method to the boundary condition for a-Si TFT mixed-level simulation

DOI<link itemprop=identifier href="https://doi.org/10.1002/(SICI)1099-1204(199803/04)11:2<123::AID-JNM295>3.0.CO;2-1" /><123::AID-JNM295>3.0.CO;2-1 10.1002/(SICI)1099-1204(199803/04)11:2<123::AID-JNM295>3.0.CO;2-1zbMath0909.65126OpenAlexW2020921396MaRDI QIDQ4213648

Yao-Tsung Tsai, Tien-Chi Ke

Publication date: 22 March 1999

Full work available at URL: https://doi.org/10.1002/(sici)1099-1204(199803/04)11:2<123::aid-jnm295>3.0.co;2-1

zbMATH Keywords

numerical experimentsamorphous silicon thin film transistureelectrode separation methodmixed level simulationnumerical device simulation

Mathematics Subject Classification ID

PDEs in connection with optics and electromagnetic theory (35Q60) Technical applications of optics and electromagnetic theory (78A55) Applications to the sciences (65Z05)

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