Numerical analysis of abrupt heterojunction bipolar transistors
DOI<221::AID-JNM303>3.0.CO;2-V 10.1002/(SICI)1099-1204(199807/08)11:4<221::AID-JNM303>3.0.CO;2-VzbMath0909.65128OpenAlexW2023358966MaRDI QIDQ4213659
Juan M. Lopez-Gonzalez, Lluis Prat, Tomás F. Pena, A. J. García-Loureiro
Publication date: 8 December 1998
Full work available at URL: https://doi.org/10.1002/(sici)1099-1204(199807/08)11:4<221::aid-jnm303>3.0.co;2-v
parallel computationtransport equationdistributed memory multicomputersdrift-diffusion equationabrupt heterojunction bipolar transistorsthermoionic emission
PDEs in connection with optics and electromagnetic theory (35Q60) Parallel numerical computation (65Y05) Technical applications of optics and electromagnetic theory (78A55) Applications to the sciences (65Z05)
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