An energy‐transport model for semiconductor heterostructure devices: application to AlGaAs/GaAs MODFETs

DOI10.1108/03321649910236993zbMath0921.65084OpenAlexW2047930610MaRDI QIDQ4243378

Philippe Caussignac, Cédric Lab

Publication date: 29 September 1999

Published in: COMPEL - The international journal for computation and mathematics in electrical and electronic engineering (Search for Journal in Brave)

Full work available at URL: https://doi.org/10.1108/03321649910236993

zbMATH Keywords

semiclassical Boltzmann equationenergy-transport equationsAlGaAs/GaAs MODFETssemi-conductor hetero-structure devices

Mathematics Subject Classification ID

Related Items (4)

Energy transport in semiconductor devices ⋮ An iterative method for adaptive finite element solutions of an energy transport model of semiconductor devices ⋮ On an algorithm for finding the electric potential distribution in the DG-MOSFET transistor ⋮ A new approach to numerical simulation of charge transport in double gate-MOSFET

Cites Work

• Unnamed Item
• A COMPARISON OF ENERGY BALANCE AND SIMPLIFIED HYDRODYNAMIC MODELS FOR GaAs SIMULATION
• On a System of Nonlinear Boltzmann Equations of Semiconductor Physics

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