Steady Euler-Poisson systems: a differential/integral equation formulation with general constitutive relations

DOI10.1016/j.na.2009.04.042zbMath1239.82045OpenAlexW2113523806WikidataQ115343103 ScholiaQ115343103MaRDI QIDQ425793

Joseph W. Jerome

Publication date: 9 June 2012

Published in: Nonlinear Analysis. Theory, Methods \& Applications. Series A: Theory and Methods (Search for Journal in Brave)

Full work available at URL: https://doi.org/10.1016/j.na.2009.04.042

zbMATH Keywords

energy densitydifferential/integral equationsteady Euler-Poisson system

Mathematics Subject Classification ID

Asymptotic behavior of solutions to PDEs (35B40) Statistical mechanics of semiconductors (82D37) Euler-Poisson-Darboux equations (35Q05) Ionized gas flow in electromagnetic fields; plasmic flow (76X05)

Related Items (4)

Steady Hydrodynamic Model of Semiconductors with Sonic Boundary: (I) Subsonic Doping Profile ⋮ Steady Hydrodynamic Model of Semiconductors with Sonic Boundary: (II) Supersonic Doping Profile ⋮ Stability of steady-state for 3-D hydrodynamic model of unipolar semiconductor with ohmic contact boundary in hollow ball ⋮ Nonlinear structural stability and linear dynamic instability of transonic steady-states to hydrodynamic model for semiconductors

Cites Work

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• Stability of semiconductor states with insulating and contact boundary conditions
• Strong relaxation of the isothermal Euler system to the heat equation
• The asymptotic behavior of global smooth solutions to the hydrodynamic model for semiconductors with spherical symmetry
• Weak solutions to a hydrodynamic model for semiconductors and relaxation to the drift-diffusion equation
• Global solutions to the isothermal Euler-Poisson system with arbitrarily large data
• Asymptotic stability of a stationary solution to a hydrodynamic model of semiconductors
• MULTI‐DIMENSIONAL DISCRETIZATION SCHEME FOR THE HYDRODYNAMIC MODEL OF SEMICONDUCTOR DEVICES
• Global Existence and Relaxation Limit for Smooth Solutions to the Euler--Poisson Model for Semiconductors
• ON THE RELAXATION LIMITS OF THE HYDRODYNAMIC MODEL FOR SEMICONDUCTOR DEVICES

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