Study of hydrodynamical limits in a multicollision scale Boltzmann equation for semiconductors
From MaRDI portal
Publication:4260511
DOI10.1063/1.532420zbMath1001.82113OpenAlexW2040406340MaRDI QIDQ4260511
Publication date: 16 December 2002
Published in: Journal of Mathematical Physics (Search for Journal in Brave)
Full work available at URL: https://doi.org/10.1063/1.532420
Cites Work
- On the normal form of the symmetric hyperbolic-parabolic systems associated with the conservation laws
- On the symmetric form of systems of conservation laws with entropy
- Systems of conservation laws of mixed type
- An energy-transport model for semiconductors derived from the Boltzmann equation.
- Weak solutions to a hydrodynamic model for semiconductors and relaxation to the drift-diffusion equation
- The bipolar hydrodynamic model for semiconductors and the drift-diffusion equations
- The influence of interelectronic collisions on conduction and breakdown in covalent semi-conductors
- The influence of interelectronic collisions on conduction and breakdown in polar crystals
- THE PROBLEM OF A GENERALIZED SOLUTION IN THE THEORY OF QUASILINEAR EQUATIONS AND IN GAS DYNAMICS
- MULTI‐DIMENSIONAL DISCRETIZATION SCHEME FOR THE HYDRODYNAMIC MODEL OF SEMICONDUCTOR DEVICES
- Runaway Phenomena and Fluid Approximation Under High Fields in Semiconductor Kinetic Theory
- Sur les solution à symétrie sphérique de l’equation d’Euler-Poisson pour l’evolution d’etoiles gazeuses
- On a hierarchy of macroscopic models for semiconductors
- Theory of the Flow of Electrons and Holes in Germanium and Other Semiconductors
- Systems of Conservation Equations with a Convex Extension
- Non-existence of global solutions to Euler-Poisson equations for repulsive forces