Self-similar solutions for diffusion in semiconductors

DOI10.1017/S0308210500028742zbMath0811.35146OpenAlexW2101024196MaRDI QIDQ4307818

Lambertus A. Peletier, William C. Troy

Publication date: 4 October 1994

Published in: Proceedings of the Royal Society of Edinburgh: Section A Mathematics (Search for Journal in Brave)

Full work available at URL: https://doi.org/10.1017/s0308210500028742

zbMATH Keywords

asymptotic propertiesdevelopment of concentration profilesprofiles of self-similar form

Mathematics Subject Classification ID

PDEs in connection with optics and electromagnetic theory (35Q60) Diffusion (76R50) Motion of charged particles (78A35)

Related Items (2)

Self-similar solutions for a free boundary problem in the doping of semiconductors ⋮ Discrete-time methods for equations modelling transport of foreign-atoms in semiconductors

Cites Work

• Unnamed Item
• Self-similar solutions for infiltration of dopant into semiconductors
• The existence of similar solutions for some laminar boundary layer problems
• Mathematical analysis of a model for substitutional diffusion

This page was built for publication: Self-similar solutions for diffusion in semiconductors