On a Nonlinear Integrodifferential Drift-Diffusion Semiconductor Model
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Publication:4310922
DOI10.1137/S0036141092238266zbMATH Open0811.35145MaRDI QIDQ4310922
Publication date: 3 November 1994
Published in: SIAM Journal on Mathematical Analysis (Search for Journal in Brave)
Nonlinear initial, boundary and initial-boundary value problems for linear parabolic equations (35K60) PDEs in connection with optics and electromagnetic theory (35Q60) Integro-partial differential equations (45K05) Partial differential equations of mixed type and mixed-type systems of partial differential equations (35M99)
Related Items (6)
Low-Field Limit for a Nonlinear Discrete Drift-Diffusion Model Arising in Semiconductor Superlattices Theory ⋮ QUALITATIVE BEHAVIOR OF SOLUTIONS OF A DEGENERATE NONLINEAR DRIFT-DIFFUSION MODEL FOR SEMICONDUCTORS ⋮ A Nonlinear Drift ‐ Diffusion System with Electric Convection Arising in Electrophoretic and Semiconductor Modeling ⋮ Voltage-current characteristics of a 𝑝𝑛-diode from a drift-diffusion model with nonlinear diffusion ⋮ Nonlinear diffusion, boundary layers and nonsmoothness: analysis of challenges in drift-diffusion semiconductor simulations ⋮ Modelling unsteady processes in semiconductors using a non-linear Sobolev equation
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