THE DEVELOPMENT OF THE RADIATION ENHANCED DIFFUSION MODEL OF BORON IN SILICON

DOI10.1108/EB051814zbMath0822.65117OpenAlexW2103749464MaRDI QIDQ4315343

G. V. Gadiyak, D. E. Blaghinin

Publication date: 8 December 1994

Published in: COMPEL - The international journal for computation and mathematics in electrical and electronic engineering (Search for Journal in Brave)

Full work available at URL: https://doi.org/10.1108/eb051814

zbMATH Keywords

diffusionradiationMonte Carlokinetic reactionboron in silicon

Mathematics Subject Classification ID

Monte Carlo methods (65C05) Finite difference methods for initial value and initial-boundary value problems involving PDEs (65M06) Applications to the sciences (65Z05) Chemical kinetics in thermodynamics and heat transfer (80A30)

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