SIMULATION OF DEFECT ASSISTED TUNNELING AND ITS EFFECT ON I‐V CHARACTERISTICS IN RESONANT TUNNELING DIODES

DOI10.1108/EB051825zbMath0812.65112OpenAlexW2166467235MaRDI QIDQ4315358

Gregory F. Spencer, Mark H. Weichold, Sangyong Lee, Donald L. Parker

Publication date: 8 December 1994

Published in: COMPEL - The international journal for computation and mathematics in electrical and electronic engineering (Search for Journal in Brave)

Full work available at URL: https://doi.org/10.1108/eb051825

zbMATH Keywords

Poisson's equationtransmission coefficientstunneling currentquantum mechanical tunnelingdefect modelI-V characteristicsI-V simulationresonant tunneling diodes

Mathematics Subject Classification ID

PDEs in connection with quantum mechanics (35Q40) Applications to the sciences (65Z05)

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