Arclength continuation methods and applications to 2D drift‐diffusion semiconductor equations

DOI10.1108/03321649610154203zbMath0866.65085OpenAlexW2118087685WikidataQ127705439 ScholiaQ127705439MaRDI QIDQ4331568

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Publication date: 30 July 1997

Published in: COMPEL - The international journal for computation and mathematics in electrical and electronic engineering (Search for Journal in Brave)

Full work available at URL: https://doi.org/10.1108/03321649610154203

zbMATH Keywords

Newton-type methodsbifurcation pointsmixed finite-element methodsarclength continuationdrift-diffusion semiconductor equationshomotopy deformation methods

Mathematics Subject Classification ID

PDEs in connection with optics and electromagnetic theory (35Q60) Finite element, Rayleigh-Ritz and Galerkin methods for boundary value problems involving PDEs (65N30) Technical applications of optics and electromagnetic theory (78A55) Applications to the sciences (65Z05)

Related Items (1)

Quantum interface conditions for quasi‐Fermi levels in an abrupt heterojunction

Cites Work

• MIXED FINITE ELEMENT APPROACH AND NONLINEAR IMPLICIT SCHEMES FOR DRIFT‐DIFFUSION EQUATION SOLUTION OF 2D HETEROJUNCTION SEMICONDUCTOR DEVICES

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