Simulation of the hydrodynamic model of semiconductor devices by a finite element method

DOI10.1108/03321649610130209zbMath1017.82501OpenAlexW2068413957MaRDI QIDQ4332191

Yves Perréal, Geng Yang, Michel Fortin

Publication date: 28 August 2003

Published in: COMPEL - The international journal for computation and mathematics in electrical and electronic engineering (Search for Journal in Brave)

Full work available at URL: https://doi.org/10.1108/03321649610130209

Mathematics Subject Classification ID

Finite element, Rayleigh-Ritz and Galerkin methods for boundary value problems involving PDEs (65N30) Statistical mechanics of semiconductors (82D37)

Related Items

An iterative method for adaptive finite element solutions of an energy transport model of semiconductor devices, Least-squares finite element formulation for hydrodynamic modeling of semiconductor devices.

Cites Work

• The finite element method with Lagrangian multipliers
• Compressible viscous flow calculations using compatible finite element approximations
• Hybrid Krylov Methods for Nonlinear Systems of Equations
• GMRES: A Generalized Minimal Residual Algorithm for Solving Nonsymmetric Linear Systems
• MULTI‐DIMENSIONAL DISCRETIZATION SCHEME FOR THE HYDRODYNAMIC MODEL OF SEMICONDUCTOR DEVICES
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