A singular limit in the drift diffusion model for semiconductors coupled with maxwell's equations

DOI10.1080/00036819708840600zbMath0886.35148OpenAlexW2060726507WikidataQ58133071 ScholiaQ58133071MaRDI QIDQ4354158

Frank Jochmann

Publication date: 13 September 1997

Published in: Applicable Analysis (Search for Journal in Brave)

Full work available at URL: https://doi.org/10.1080/00036819708840600

zbMATH Keywords

Poisson's equationMaxwell's equationsmixed boundary conditionsdrift diffusion model

Mathematics Subject Classification ID

PDEs in connection with optics and electromagnetic theory (35Q60) Singular perturbations in context of PDEs (35B25) Dependence of solutions to PDEs on initial and/or boundary data and/or on parameters of PDEs (35B30) Initial value problems for first-order hyperbolic systems (35L45)

Cites Work

• Unnamed Item
• On the basic equations for carrier transport in semiconductors
• Asymptotic behavior of solutions of transport equations for semiconductor devices
• An application of the invariance principle to reaction diffusion equations
• Existence of weak solutions of the drift diffusion model coupled with Maxwell's equations
• On the time-dependent drift-diffusion model for semiconductors
• On Existence, Uniqueness and Asymptotic Behavior of Solutions of the Basic Equations for Carrier Transport in Semiconductors
• Time-dependent solutions of a nonlinear system arising in semiconductor theory
• A local compactness theorem for Maxwell's equations
• A compactness result for vector fields with divergence and curl in L^q(ω) involving mixed boundary conditions
• ON THE EXISTENCE AND UNIQUENESS OF TRANSIENT SOLUTIONS OF A DEGENERATE NONLINEAR DRIFT-DIFFUSION MODEL FOR SEMICONDUCTORS
• Theory of the Flow of Electrons and Holes in Germanium and Other Semiconductors
• An Initial Value Problem from Semiconductor Device Theory

This page was built for publication: A singular limit in the drift diffusion model for semiconductors coupled with maxwell's equations