A 3D Rectangular Mixed Finite Element Method to Solve the Stationary Semiconductor Equations
DOI10.1137/S1064827594275091zbMath0911.65131OpenAlexW2031860763MaRDI QIDQ4389248
Publication date: 12 May 1998
Published in: SIAM Journal on Scientific Computing (Search for Journal in Brave)
Full work available at URL: https://doi.org/10.1137/s1064827594275091
numerical examplesmixed finite-element methodmesh refinementsemiconductor equationsvan Roosbroeck equationsboundary and internal layers
PDEs in connection with optics and electromagnetic theory (35Q60) Finite element, Rayleigh-Ritz and Galerkin methods for boundary value problems involving PDEs (65N30) Technical applications of optics and electromagnetic theory (78A55) Mesh generation, refinement, and adaptive methods for boundary value problems involving PDEs (65N50) Applications to the sciences (65Z05)
Related Items (6)
Cites Work
- Numerical Methods for Semiconductor Device Simulation
- Two-Dimensional Exponential Fitting and Applications to Drift-Diffusion Models
- A Tetrahedral Mixed Finite Element Method for the Stationary Semiconductor Continuity Equations
- A fast algorithm to compute the moments of the exponential function for application to semiconductor modelling
- An analysis of the Scharfetter-Gummel box method for the stationary semiconductor device equations
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