Monte Carlo modelling of abrupt InP/InGaAs HBTs

DOI10.1002/JNM.501zbMath1023.82008OpenAlexW1967004373MaRDI QIDQ4418191

Pau Garcias-Salvá, Lluis Prat, Juan M. Lopez-Gonzalez

Publication date: 7 August 2003

Published in: International Journal of Numerical Modelling: Electronic Networks, Devices and Fields (Search for Journal in Brave)

Full work available at URL: https://doi.org/10.1002/jnm.501

zbMATH Keywords

InPheterojunction bipolar transistor (HBT)III-V semiconductorsInGaAselectron transmission coefficientHBT modellingMonte Carlo (MC) device simulation

Mathematics Subject Classification ID

Statistical mechanics of semiconductors (82D37)

This page was built for publication: Monte Carlo modelling of abrupt InP/InGaAs HBTs