On modelling thermal oxidation of Silicon I: theory

DOI<341::AID-NME774>3.0.CO;2-Z 10.1002/(SICI)1097-0207(20000110/30)47:1/3<341::AID-NME774>3.0.CO;2-ZzbMath0988.74010OpenAlexW2009017033MaRDI QIDQ4493651

Thomas J. R. Hughes, Vinay S. Rao

Publication date: 22 July 2002

Full work available at URL: https://doi.org/10.1002/(sici)1097-0207(20000110/30)47:1/3<341::aid-nme774>3.0.co;2-z

zbMATH Keywords

siliconviscoelasticitymomentum balanceinterface motionconservation equationsthermal oxidationsilicon dioxidediffusion-reaction processlarge expansionmass balance lawoxidant transportsplit of deformation gradientstress equilibration process

Mathematics Subject Classification ID

Reactive materials (74A65) Nonlinear constitutive equations for materials with memory (74D10)

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