On modelling thermal oxidation of Silicon II: numerical aspects
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Publication:4493652
DOI<359::AID-NME775>3.0.CO;2-7 10.1002/(SICI)1097-0207(20000110/30)47:1/3<359::AID-NME775>3.0.CO;2-7zbMath0988.74011OpenAlexW1998346759MaRDI QIDQ4493652
Thomas J. R. Hughes, Krishna Garikipati, Vinay S. Rao
Publication date: 14 July 2002
Full work available at URL: https://doi.org/10.1002/(sici)1097-0207(20000110/30)47:1/3<359::aid-nme775>3.0.co;2-7
finite element methodlevel-set methodstaggered schemediscontinuous interpolationoxidation of siliconlarge expansionsilicon-silicon dioxide interface
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