THE GLOBAL WEAK SOLUTION AND RELAXATION LIMITS OF THE INITIAL–BOUNDARY VALUE PROBLEM TO THE BIPOLAR HYDRODYNAMIC MODEL FOR SEMICONDUCTORS
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Publication:4526093
DOI10.1142/S0218202500000653zbMath1061.82027WikidataQ128379348 ScholiaQ128379348MaRDI QIDQ4526093
Publication date: 2000
Published in: Mathematical Models and Methods in Applied Sciences (Search for Journal in Brave)
Related Items
Stability of stationary solutions to the compressible bipolar Euler-Poisson equations ⋮ Optimal decay rate of the bipolar Euler–Poisson system with damping in dimension three ⋮ Pointwise estimates of solutions for the multi-dimensional bipolar Euler-Poisson system ⋮ Global existence and asymptotic behavior of smooth solutions to a bipolar Euler-Poisson equation in a bound domain ⋮ Long-time self-similarity of classical solutions to the bipolar quantum hydrodynamic models ⋮ Global existence and large time behavior of solutions to the bipolar nonisentropic Euler-Poisson equations ⋮ The relaxation limits to the bipolar hydrodynamic model for semiconductors ⋮ Multi-dimensional bipolar hydrodynamic model of semiconductor with insulating boundary conditions and non-zero doping profile ⋮ Relaxation limit of the one-dimensional bipolar Euler-Poisson system in the bound domain ⋮ Relaxation-time limit of the three-dimensional hydrodynamic model with boundary effects ⋮ Large-time behavior of solutions to unipolar Euler-Poisson equations with time-dependent damping ⋮ Stability of the stationary solution of the Cauchy problem to a semiconductor full hydrodynamic model with recombination-generation rate ⋮ Global existence and large time behavior of solutions for the bipolar quantum hydrodynamic models in the quarter plane ⋮ Large-time behavior of the full compressible Euler-Poisson system without the temperature damping
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