Simulation of submicron pseudomorphic AlGaAs/InGaAs/GaAs high electron mobility transistors

DOI10.1108/03321640210416296zbMath1002.82536OpenAlexW2146994865MaRDI QIDQ4537264

Nadia Lamari, Nabil R. Nassif, Mohamed Mfitih

Publication date: 5 August 2002

Published in: COMPEL - The international journal for computation and mathematics in electrical and electronic engineering (Search for Journal in Brave)

Full work available at URL: https://doi.org/10.1108/03321640210416296

zbMATH Keywords

finite elementsemiconductorhydrodynamic modeldrift-diffusion modelsimulationssubmicron pseudomorphic AlGaAs/InGaAs/GaAs HEMT simulations

Mathematics Subject Classification ID

Statistical mechanics of semiconductors (82D37)

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