Effects of an intense, high-frequency laser field on the intersubband transitions and impurity binding energy in semiconductor quantum wells

DOI10.1016/j.physleta.2010.05.020zbMath1248.82070OpenAlexW2090870704MaRDI QIDQ455240

J. Herrera, D. Rodríguez-Gómez

Publication date: 4 October 2012

Published in: Physics Letters. A (Search for Journal in Brave)

Full work available at URL: https://doi.org/10.1016/j.physleta.2010.05.020

zbMATH Keywords

intersubband transitionsimpurity binding energyintense laser field

Mathematics Subject Classification ID

Statistical mechanics of semiconductors (82D37) Lasers, masers, optical bistability, nonlinear optics (78A60) Electrochemistry (78A57)

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