A hydrodynamic model for silicon semiconductors including crystal heating

DOI10.1017/S0956792515000157zbMath1383.82068MaRDI QIDQ4594545

Giovanni Mascali

Publication date: 24 November 2017

Published in: European Journal of Applied Mathematics (Search for Journal in Brave)

zbMATH Keywords

maximum entropy principlesiliconhydrodynamical modelscrystal heating

Mathematics Subject Classification ID

Interacting particle systems in time-dependent statistical mechanics (82C22) PDEs in connection with fluid mechanics (35Q35) Navier-Stokes equations for incompressible viscous fluids (76D05) Statistical mechanics of semiconductors (82D37) Lasers, masers, optical bistability, nonlinear optics (78A60) Physical optics (78A10) PDEs in connection with statistical mechanics (35Q82)

Related Items (15)

A three-fluid approach in bipolar semiconductors with generation-recombination: constitutive laws and Onsager symmetry ⋮ A new formula for thermal conductivity based on a hierarchy of hydrodynamical models ⋮ Drift-diffusion models for the simulation of a graphene field effect transistor ⋮ An Energy Transport Model Describing Electro-Thermal Transport in Silicon Carbide Semiconductors ⋮ Monte Carlo Analysis of Thermal Effects in Monolayer Graphene ⋮ Charge Transport in Graphene including Thermal Effects ⋮ Some Electric, Thermal, and Thermoelectric Properties of Suspended Monolayer Graphene ⋮ A benchmark study of the signed-particle Monte Carlo algorithm for the Wigner equation ⋮ A hierarchy of hydrodynamic models for silicon carbide semiconductors ⋮ An improved 2D-3D model for charge transport based on the maximum entropy principle ⋮ A full coupled drift-diffusion-Poisson simulation of a GFET ⋮ Existence and uniqueness for a two-temperature energy-transport model for semiconductors ⋮ A complete multifluid model for bipolar semiconductors, with interacting carriers, phonons, and photons ⋮ Quantum corrected hydrodynamic models for charge transport in graphene ⋮ Assessment of the Constant Phonon Relaxation Time Approximation in Electron–Phonon Coupling in Graphene

Cites Work

• Unnamed Item
• Unnamed Item
• Unnamed Item
• Unnamed Item
• A hydrodynamical model for holes in silicon semiconductors: the case of non-parabolic warped bands
• An energy transport model describing heat generation and conduction in silicon semiconductors
• Electron-phonon hydrodynamical model for semiconductors
• An extended moment method in radiative transfer: The matrices of mean absorption and scattering coefficients
• Maximum entropy principle in relativistic radiation hydrodynamics. II: Compton and double Compton scattering
• A hydrodynamic model for covalent semiconductors with applications to GaN and SiC
• Numerical simulation of a double-gate MOSFET with a subband model for semiconductors based on the maximum entropy principle
• A hydrodynamical model for covalent semiconductors with a generalized energy dispersion relation
• Efficient Numerical Solution of the 3-D Semiconductor Poisson Equation for {Monte Carlo} Device Simulation
• Hydrodynamic modeling of the electro-thermal transport in silicon semiconductors
• Information Theory and Statistical Mechanics
• Maximisation of the entropy in non-equilibrium
• A Semicontinuous Formulation of the Bloch--Boltzmann--Peierls Equations
• Kinetic and Hydrodynamic Models for Multi-Band Quantum Transport in Crystals

This page was built for publication: A hydrodynamic model for silicon semiconductors including crystal heating