Current/Voltage Characteristics of the Short-Channel Double-Gate Transistor. Part I

DOI10.1137/17M1121123zbMath1392.82060WikidataQ130052677 ScholiaQ130052677MaRDI QIDQ4609599

Stefan G. Llewellyn Smith, Ellis Cumberbatch

Publication date: 5 April 2018

Published in: SIAM Journal on Applied Mathematics (Search for Journal in Brave)

zbMATH Keywords

asymptotic analysisMOSFETcurrent-voltage relationdouble gate transistor

Mathematics Subject Classification ID

Asymptotic behavior of solutions to PDEs (35B40) PDEs in connection with optics and electromagnetic theory (35Q60) Statistical mechanics of semiconductors (82D37) Statistical mechanics of solids (82D20) Motion of charged particles (78A35) Second-order elliptic systems (35J47)

Uses Software

• DLMF

Cites Work

• Unnamed Item
• Unnamed Item
• Singular perturbation methods for ordinary differential equations
• On the Lambert \(w\) function
• Multiple scale and singular perturbation methods
• Singular Perturbation Theory
• Asymptotic Methods for Metal Oxide Semiconductor Field Effect Transistor Modeling
• Singular Perturbations and a Free Boundary Problem in the Modeling of Field-Effect Transistors
• Current-voltage characteristics from an asymptotic analysis of the MOSFET equations

This page was built for publication: Current/Voltage Characteristics of the Short-Channel Double-Gate Transistor. Part I