Simulation of a double-gate MOSFET by a non-parabolic energy-transport subband model for semiconductors based on the maximum entropy principle
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Publication:462764
DOI10.1016/j.mcm.2012.11.007zbMath1297.81176OpenAlexW2061793071MaRDI QIDQ462764
Vittorio Romano, Giovanni Mascali, Vito Dario Camiola
Publication date: 21 October 2014
Published in: Mathematical and Computer Modelling (Search for Journal in Brave)
Full work available at URL: https://doi.org/10.1016/j.mcm.2012.11.007
Electromagnetic interaction; quantum electrodynamics (81V10) Statistical mechanics of nanostructures and nanoparticles (82D80)
Related Items (9)
Hydrodynamic equations for electrons in graphene obtained from the maximum entropy principle ⋮ A parallel deterministic solver for the Schrödinger-Poisson-Boltzmann system in ultra-short DG-MOSFETs: Comparison with Monte-Carlo ⋮ Hybrid coupling of a one-dimensional energy-transport Schrödinger system ⋮ A posteriori error control in numerical simulations of semiconductor nanodevices ⋮ Charge Transport in Graphene including Thermal Effects ⋮ An improved 2D-3D model for charge transport based on the maximum entropy principle ⋮ Hydrodynamical model for charge transport in graphene ⋮ A new approach to numerical simulation of charge transport in double gate-MOSFET ⋮ Quantum corrected hydrodynamic models for charge transport in graphene
Cites Work
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- A hydrodynamical model for holes in silicon semiconductors: the case of non-parabolic warped bands
- Local-in-time well-posedness of a regularized mathematical model for silicon MESFET
- Subband decomposition approach for the simulation of quantum electron transport in nanostructures
- A deterministic solver for a hybrid quantum-classical transport model in nanoMOSFETs
- 2D numerical simulation of the MEP energy-transport model with a finite difference scheme
- Modeling and simulation of electronic structure, material interface and random doping in nano-electronic devices
- Hydrodynamical model of charge transport in GaAs based on the maximum entropy principle
- The Onsager reciprocity principle as a check of consistency for semiconductor carrier transport models
- A nonlinear determination of the distribution function of degenerate gases with an application to semiconductors
- Quantum-corrected drift-diffusion models for transport in semiconductor devices
- Numerical simulation of a double-gate MOSFET with a subband model for semiconductors based on the maximum entropy principle
- Non parabolic band transport in semiconductors: closure of the moment equations
- Non-parabolic band transport in semiconductors: Closure of the production terms in the moment equations
- Hierarchy of semiconductor equations: relaxation limits with initial layers for large initial data.
- Non-parabolic band hydrodynamical model of silicon semiconductors and simulation of electron devices
- Numerical Simulation of a Hydrodynamic Subband Model for Semiconductors Based on the Maximum Entropy Principle
- Charge transport in 1D silicon devices via Monte Carlo simulation and Boltzmann‐Poisson solver
- Information Theory and Statistical Mechanics
- DIFFUSIVE TRANSPORT OF PARTIALLY QUANTIZED PARTICLES: EXISTENCE, UNIQUENESS AND LONG-TIME BEHAVIOUR
- Quantum corrections to the semiclassical hydrodynamical model of semiconductors based on the maximum entropy principle
- Exact Maximum Entropy Closure of the Hydrodynamical Model for Si Semiconductors: The 8-Moment Case
- A Deterministic Solver to the Boltzmann-Poisson System Including Quantization Effects for Silicon-MOSFETs
- Numerical Discretization of Energy-Transport Models for Semiconductors with Nonparabolic Band Structure
- Simulation of Gunn oscillations with a non‐parabolic hydrodynamical model based on the maximum entropy principle
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