Geometric programming approach to doping profile design optimization of metal-oxide-semiconductor devices

DOI10.1016/j.mcm.2012.11.002zbMath1297.90190OpenAlexW2091667309MaRDI QIDQ462766

Yiming Li, Ying-Chieh Chen

Publication date: 21 October 2014

Published in: Mathematical and Computer Modelling (Search for Journal in Brave)

Full work available at URL: https://doi.org/10.1016/j.mcm.2012.11.002

zbMATH Keywords

design optimizationgeometric programmingdoping profileMOS devices

Mathematics Subject Classification ID

Applications of mathematical programming (90C90) Applications of design theory to circuits and networks (94C30)

Related Items

The Quasi-Neutral Limit in Optimal Semiconductor Design ⋮ Robust chance-constrained geometric programming with application to demand risk mitigation

Uses Software

• GGPLAB

Cites Work

• Unnamed Item
• Unnamed Item
• Unnamed Item
• A parallel monotone iterative method for the numerical solution of multi-dimensional semiconductor Poisson equation
• Temperature-aware floorplanning via geometric programming
• On/off-state design of semiconductor doping profiles
• A tutorial on geometric programming
• Experimental behavior of an interior point cutting plane algorithm for convex programming: An application to geometric programming
• An infeasible interior-point algorithm for solving primal and dual geometric programs
• Inverse Problems for Metal Oxide Semiconductor Field-Effect Transistor Contact Resistivity
• Solution of generalized geometric programs
• Digital Circuit Optimization via Geometric Programming
• On inverse doping profile problems for the stationary voltage–current map

This page was built for publication: Geometric programming approach to doping profile design optimization of metal-oxide-semiconductor devices