Modeling of transient drain current overshoot in polycrystalline silicon thin-film transistors

DOI10.1016/J.MCM.2012.11.013zbMath1297.82041OpenAlexW2003559488MaRDI QIDQ462768

Yoshinari Kamakura, Toshifumi Ota

Publication date: 21 October 2014

Published in: Mathematical and Computer Modelling (Search for Journal in Brave)

Full work available at URL: https://doi.org/10.1016/j.mcm.2012.11.013

zbMATH Keywords

self-heatingequivalent circuit modelthin film transistortransient characteristicstrap

Mathematics Subject Classification ID

Statistical mechanics of semiconductors (82D37)

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