Simulation of Gunn oscillations with a non‐parabolic hydrodynamical model based on the maximum entropy principle

DOI10.1108/03321640510571039zbMath1071.78031OpenAlexW2061819883MaRDI QIDQ4672394

Vittorio Romano, Giovanni Mascali

Publication date: 29 April 2005

Published in: COMPEL - The international journal for computation and mathematics in electrical and electronic engineering (Search for Journal in Brave)

Full work available at URL: https://doi.org/10.1108/03321640510571039

zbMATH Keywords

semiconductorsnumerical analysiselectrical conductivityelectron physics

Mathematics Subject Classification ID

Finite difference methods applied to problems in optics and electromagnetic theory (78M20) General topics in optics and electromagnetic theory (78A99)

Related Items (6)

A hydrodynamic model for covalent semiconductors with applications to GaN and SiC ⋮ A non parabolic hydrodynamical subband model for semiconductors based on the maximum entropy principle ⋮ Numerical simulation of a double-gate MOSFET with a subband model for semiconductors based on the maximum entropy principle ⋮ An energy transport model describing heat generation and conduction in silicon semiconductors ⋮ Simulation of a double-gate MOSFET by a non-parabolic energy-transport subband model for semiconductors based on the maximum entropy principle ⋮ Hydrodynamic simulation of a \(n^{+}-n-n^{+}\) silicon nanowire

Cites Work

• Unnamed Item
• Non-oscillatory central differencing for hyperbolic conservation laws
• Hydrodynamical model of charge transport in GaAs based on the maximum entropy principle
• Moment closure hierarchies for kinetic theories.
• 2D simulation of a silicon MESFET with a nonparabolic hydrodynamical model based on the maximum entropy principle
• Non parabolic band transport in semiconductors: closure of the moment equations
• Non-parabolic band transport in semiconductors: Closure of the production terms in the moment equations
• Central Schemes for Balance Laws of Relaxation Type
• Non-parabolic band hydrodynamical model of silicon semiconductors and simulation of electron devices
• TRANSIENT SEMICONDUCTOR DEVICE SIMULATION INCLUDING ENERGY BALANCE EQUATION
• Nonoscillatory Central Schemes for Multidimensional Hyperbolic Conservation Laws
• Extended Hydrodynamical Model of Carrier Transport in Semiconductors
• NUMERICAL SOLUTION FOR HYDRODYNAMICAL MODELS OF SEMICONDUCTORS
• On a hierarchy of macroscopic models for semiconductors
• Hydrodynamical modeling of charge carrier transport in semiconductors

This page was built for publication: Simulation of Gunn oscillations with a non‐parabolic hydrodynamical model based on the maximum entropy principle