Transient analysis of LE‐VGF growth of compound semiconductors
DOI10.1108/09615539810241141zbMath0962.76632OpenAlexW2074351166MaRDI QIDQ4700966
Jun Shimizu, Yasunori Okano, Takahiro Morita, Susumu Sakai
Publication date: 19 June 2001
Published in: International Journal of Numerical Methods for Heat & Fluid Flow (Search for Journal in Brave)
Full work available at URL: https://doi.org/10.1108/09615539810241141
finite differencesgrowth ratecrystal growththermal conductivityboundary fixing methodcrucible thicknessliquid encapsulated vertical gradient freezing methodmelt/crystal interface shape
Stefan problems, phase changes, etc. (80A22) Multiphase and multicomponent flows (76T99) Finite difference methods applied to problems in fluid mechanics (76M20) Statistical mechanics of semiconductors (82D37)
Cites Work
- Two-dimensional unsteady solidification problem calculated by using the boundary-fitted coordinate system
- Computer simulation of liquid encapsulated vertical bridgman crystal growth: pseudo steady‐state calculations
- A numerical method for solving the two‐dimensional unsteady solidification problem with the motion of melt by using the boundary‐fitted co‐ordinate system
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