Macroscopic models for semiconductor heterostructures
From MaRDI portal
Publication:4701668
DOI10.1063/1.532528zbMath0938.82049OpenAlexW1966982940MaRDI QIDQ4701668
Pierre Degond, Christian Schmeiser
Publication date: 21 November 1999
Published in: Journal of Mathematical Physics (Search for Journal in Brave)
Full work available at URL: https://semanticscholar.org/paper/e434b5f2866f598e2e9c4e1a2859d73b59314750
semiconductor Boltzmann equationspherical harmonics expansionkinetic boundary layersheterojunctionshigher-order transmissionspace-dependent band characteristic
Rarefied gas flows, Boltzmann equation in fluid mechanics (76P05) Statistical mechanics of semiconductors (82D37) Kinetic theory of gases in time-dependent statistical mechanics (82C40)
Related Items
Mathematical modelling of charge transport in graphene heterojunctions, Kinetic boundary layers and fluid-kinetic coupling in semiconductors, ON THE RELAXATION LIMITS OF THE HYDRODYNAMIC MODEL FOR SEMICONDUCTOR DEVICES, Hybrid Classical-Quantum Models for Charge Transport in Graphene with Sharp Potentials, ANALYSIS OF A SPHERICAL HARMONICS EXPANSION MODEL OF PLASMA PHYSICS, A system of parabolic equations in nonequilibrium thermodynamics including thermal and electrical effects, Hybrid coupling of a one-dimensional energy-transport Schrödinger system, Weak Solutions for Nonlinear Boltzmann–Poisson System Modelling Electron–Electron Interactions, Homogenization of a spherical harmonics expansion model, Unnamed Item, On the initial-boundary value problem for the bipolar hydrodynamic model for semiconductors, Simulation of visible and ultra-violet group-III nitride light emitting diodes, Numerical comparison between two spherical harmonics expansion models and a kinetic equation, Quantum transmission conditions for diffusive transport in graphene with steep potentials, Classical solutions of drift-diffusion equations for semiconductor devices: The two-dimensional case, Diffusion limit of a Boltzmann–Poisson system with nonlinear equilibrium state, A coupled Schrödinger drift-diffusion model for quantum semiconductor device simulations
Cites Work
- Unnamed Item
- High electric field approximation to charge transport in semiconductor devices
- An energy-transport model for semiconductors derived from the Boltzmann equation.
- Knudsen layers from a computational viewpoint
- ELASTIC AND DRIFT–DIFFUSION LIMITS OF ELECTRON–PHONON INTERACTION IN SEMICONDUCTORS
- COMPARATIVE STUDIES OF HYDRODYNAMIC AND ENERGY TRANSPORT MODELS
- SECOND ORDER BOUNDARY CONDITIONS FOR THE DRIFT-DIFFUSION EQUATIONS OF SEMICONDUCTORS
- On a hierarchy of macroscopic models for semiconductors