Semiconductor device modelling from the numerical point of view
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Publication:4728191
DOI10.1002/nme.1620240408zbMath0618.65125OpenAlexW2099105561MaRDI QIDQ4728191
Simon J. Polak, Willy H. A. Schilders, Cor Den Heijer
Publication date: 1987
Published in: International Journal for Numerical Methods in Engineering (Search for Journal in Brave)
Full work available at URL: https://doi.org/10.1002/nme.1620240408
contraction mapping principleNewton's methodelectrostatic potentialcontinuity equationssemiconductor device modellingbipolar transistornon-linear Poisson equationresurf device
Technical applications of optics and electromagnetic theory (78A55) Partial differential equations of mathematical physics and other areas of application (35Q99) Applications to the sciences (65Z05) Electro- and magnetostatics (78A30) Numerical solution of discretized equations for boundary value problems involving PDEs (65N22)
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Uses Software
Cites Work
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- A QUALITATIVE ANALYSIS OF THE FUNDAMENTAL SEMICONDUCTOR DEVICE EQUATIONS
- ANALYSIS OF A DISCRETIZATION ALGORITHM FOR STATIONARY CONTINUITY EQUATIONS IN SEMICONDUCTOR DEVICE MODELS, II
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