A parallel 3D semiconductor device simulator for gradual heterojunction bipolar transistors

DOI10.1002/jnm.482zbMath1034.82066OpenAlexW2140827583WikidataQ112878859 ScholiaQ112878859MaRDI QIDQ4804591

A. J. García-Loureiro, Tomás F. Pena, Juan M. Lopez-Gonzalez

Publication date: 28 April 2003

Published in: International Journal of Numerical Modelling: Electronic Networks, Devices and Fields (Search for Journal in Brave)

Full work available at URL: https://doi.org/10.1002/jnm.482

zbMATH Keywords

domain decomposition methodsFEMmulticomputersdevice simulatorHBT

Mathematics Subject Classification ID

Related Items (1)

Parallel domain decomposition methods for a quantum-corrected drift-diffusion model for MOSFET devices

Uses Software

• P-SPARSLIB
• METIS

Cites Work

• Unnamed Item
• Numerical analysis of abrupt heterojunction bipolar transistors

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