Finite Element Analysis of the One-Dimensional Full Drift-Diffusion Semiconductor Model

DOI10.1137/0732019zbMath0822.65115OpenAlexW2017629177MaRDI QIDQ4835056

Zhang-Xin Chen

Publication date: 15 October 1995

Published in: SIAM Journal on Numerical Analysis (Search for Journal in Brave)

Full work available at URL: https://doi.org/10.1137/0732019

zbMATH Keywords

finite elementdrift-diffusion semiconductor devices

Mathematics Subject Classification ID

PDEs in connection with optics and electromagnetic theory (35Q60) Finite element, Rayleigh-Ritz and Galerkin methods for boundary value problems involving PDEs (65N30) Technical applications of optics and electromagnetic theory (78A55) Applications to the sciences (65Z05)

Related Items

Numerical algorithms based on Galerkin methods for the modeling of reactive interfaces in photoelectrochemical (PEC) solar cells, Finite volume element approximation and analysis for a kind of semiconductor device simulation