MIXED FINITE ELEMENT APPROACH AND NONLINEAR IMPLICIT SCHEMES FOR DRIFT‐DIFFUSION EQUATION SOLUTION OF 2D HETEROJUNCTION SEMICONDUCTOR DEVICES
DOI10.1108/eb051880zbMath0824.65135OpenAlexW2053920980MaRDI QIDQ4835953
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Publication date: 13 November 1995
Published in: COMPEL - The international journal for computation and mathematics in electrical and electronic engineering (Search for Journal in Brave)
Full work available at URL: https://doi.org/10.1108/eb051880
stabilityconvergenceexistenceerror estimatesuniquenessboundary value problemsfinite elementdrift-diffusion equationsemiconductor equationsheterojunction bipolar transistornonlinear implicit schemes
PDEs in connection with optics and electromagnetic theory (35Q60) Finite difference methods for initial value and initial-boundary value problems involving PDEs (65M06) Stability and convergence of numerical methods for initial value and initial-boundary value problems involving PDEs (65M12) Finite element, Rayleigh-Ritz and Galerkin methods for initial value and initial-boundary value problems involving PDEs (65M60) Technical applications of optics and electromagnetic theory (78A55) Error bounds for initial value and initial-boundary value problems involving PDEs (65M15) Applications to the sciences (65Z05)
Related Items (2)
Cites Work
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- Two families of mixed finite elements for second order elliptic problems
- Multiple limit point bifurcation
- Finite Element Methods for Navier-Stokes Equations
- ANALYSIS OF A DISCRETIZATION ALGORITHM FOR STATIONARY CONTINUITY EQUATIONS IN SEMICONDUCTOR DEVICE MODELS, II
- Mixed and Hybrid Finite Element Methods
- A fast adaptive grid scheme for elliptic partial differential equations
- An adaptive mesh-moving and local refinement method for time-dependent partial differential equations
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