Self-similar solutions for a free boundary problem in the doping of semiconductors

DOI10.1017/S0956792500001765zbMath0842.35140OpenAlexW2018980101MaRDI QIDQ4867407

Lambertus A. Peletier, William C. Troy

Publication date: 12 August 1996

Published in: European Journal of Applied Mathematics (Search for Journal in Brave)

Full work available at URL: https://doi.org/10.1017/s0956792500001765

zbMATH Keywords

diffusion modelevolution of the concentration profiles of the impuritiesimplant problem

Mathematics Subject Classification ID

PDEs in connection with optics and electromagnetic theory (35Q60) Free boundary problems for PDEs (35R35)

Cites Work

• Self-similar solutions for infiltration of dopant into semiconductors
• The existence of similar solutions for some laminar boundary layer problems
• Mathematical analysis of a model for substitutional diffusion
• Self-similar solutions for diffusion in semiconductors
• The existence of axially symmetric flow above a rotating disk

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